Advances growth and optical properties of site-controlled single GaN/AlGaN nanowire quantum dots

来源 :International Conference on Nanoscience & Technology,China 2 | 被引量 : 0次 | 上传用户：flyingmomo1986

【摘要】

：

Semiconductor quantum dots (QDs) formed by Stranski-Krastanow growth mode has enabled the realization of highly-efficient optoelectronic devices such as QD lasers.Also, unique features of the QDs are

【作者】

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Yasuhiko Arakawa Kihyun Choi Munetaka Arita Satoshi Kako Mark Holmes

【机构】

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Institute of Industrial Science,Institute for Quantum Information Electronics,The University of Toky

【出处】

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International Conference on Nanoscience & Technology,China 2

【发表日期】

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2013年3期

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　　Semiconductor quantum dots (QDs) formed by Stranski-Krastanow growth mode has enabled the realization of highly-efficient optoelectronic devices such as QD lasers.Also, unique features of the QDs are promising for the development of solid state quantum information processing technologies.Particularly,Ⅲ-nitride QDs are important for high-temperature operation of quantum information devices.In this presentation, we discuss our recent advances in site-controlled single GraN/AlGaN nanowire quantum dots.

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Advances growth and optical properties of site-controlled single GaN/AlGaN nanowire quantum dots

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