【摘 要】
：
We will give a brief overview of scaling of power dissipation of CMOS.Then I will describe the advantage of collective spin memory devices in terms of nonvolatility, low switching energy, high speed,
【机 构】
：
Western Institute of Nanoelectronics-WIN Center on Functions Accelerated NanoMaterial Engineering
【出 处】
：
International Conference on Nanoscience & Technology,China 2
论文部分内容阅读
We will give a brief overview of scaling of power dissipation of CMOS.Then I will describe the advantage of collective spin memory devices in terms of nonvolatility, low switching energy, high speed, high endurance, and scalability.These advantages offer a potential of incorporating nonvolatile spin transfer torque (STT-RAM) with CMOS for embedded application, e.g., replacing volatile CMOS Static RAM (SRAM), followed by discussion of integration of CMOS reconfigurable circuits with STT-RAM.We will then present the recent advances and scaling limits of the STT memory as well as new development using the spin Hall Effect to reduce the write current.
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