The Effects of Neodymium Incorporation on NdxIn1-xO3Thin-Film Transistors

• 作 者: 林振国 兰林锋 彭俊彪
• 机 构: 发光材料与器件国家重点实验室,华南理工大学,广东广州,510640
• 出 处: 中国真空学会2016学术年会
• 发表日期: 2016年5期
• 关键词: thin film transistor oxide semiconductor stability

　　Amorphous oxide semiconductors(AOSs)are considered as the most promising channel materials for thin-film transistors(TFTs)due to their advantages of high mobility,good transparency in the visible region,excellent uniformity over large areas and low-temperature process.[1] However,the stability of ZnO-based TFT devices still remains the most critical issue to be solved.[2]In this work,neodymium-substituted indium oxide(NdxIn1-xO3, NIO)semiconducting thin films fabricated by rf sputtering were investigated.TFTs with different NIO channel layers(5,15,and 25 at.%of Nd(Nd/(Nd+In)))were fabricated using bottom-gate structure.It was found that the incorporation of Nd atoms would lead to broadening the optical band gap,suppressing the grain growth,and reducing the free carrier concentration.The FETs with different NIO channel layers exhibited similar electrical stability under positive gate-bias-stress,but the ones with 15 at.%and 25 at.%of Nd concentration displayed much better stability under negative gate-bias-stress.Detailed studies showed that the content of |Nd3d5/2 54f4O2p–1> electron configuration decreased as the Nd concentration increased,resulting in the reduction of holes during negative-bias-stress.And the reduction of the |Nd3d5/2 54f4O2p–1> content as the Nd concentration increased was ascribed to less overlap between the metal and ligand orbitals arose from large lattice expansion.The NIO-5 TFT exhibits a maximum μsat of 46.4 cm2/Vs.