【摘 要】
：
Titanium oxysulfate (TiOSO4) was used as an inorganic titanium precursor to synthesize TiO2 nanorods on transparent conductive fluorine-doped tin oxide ffTO) substrates through a facile hydrothermal p
【机 构】
：
College of Materials Science and Engineering, Qingdao University of Science and Technology, Qingdao,
【出 处】
：
第十七届全国化合物半导体材料微波器件和光电器件学术会议
论文部分内容阅读
Titanium oxysulfate (TiOSO4) was used as an inorganic titanium precursor to synthesize TiO2 nanorods on transparent conductive fluorine-doped tin oxide ffTO) substrates through a facile hydrothermal process.The Ti(O2 nanorod film was futile phase and exhibited an array/duster double-layer structure.Under the illumination of a solar simulator,the short-circuit photocurrent dcnsity of TiO2 nanorods reached up to 0.17 mA/cm2,which was over twice that of the samples originated from organic titanium isopropoxide under the same reaction conditions.Multi-dimensional structure and the participation of inorganic oxysulfate (OSO44-) anion contriibute to the enhanced photocurrent response of TiO2 nanorod films.
其他文献
笔者研究了不同极性的n型InN薄膜的输运性质。经常在N极性InN薄膜中出现的晶界(GB)被证实会增强载流子的散射,进而削弱电子的迁移率。在晶界两侧会形成势垒,阻挡部分载流子的漂移运动,导致在GB两侧有较多的电子积累。但是,In极性薄膜表面总是可以看到单层原子的台阶状分布,相对于N极性样品,表面更加光滑平整,并不会出现晶粒状表面,所以也就没有必要考虑GB对散射的影响。对于两种极性样品载流子浓度和迁移
利用垂直梯度凝固生长技术(VGF)制备了半绝缘砷化镓晶锭,经线锯切割后对晶片进行长时间的高温退火。在退火工艺前对晶片进行不同方法的预处理,利用辉光放电技术(Glow Discharge Mass Spectrometry,GDMS)、霍尔测试(Hall),傅里叶变换红外光谱仪(Fourier Transform Infrared Absorption Spectroscopy,FTIR)、光致发光
利用拉曼散射的方法研究了AlN晶针在不同直径(9.5tm≤d≤45.9μm)处光学声子E21、A1(TO)、E22、E1(TO)和E1(LO)的振动行为。因为拉曼信号的散射截面会随着AIN晶针直径的增加而增加，使得拉曼探测信号的强度会随着AIN晶针直径的增加而增强。研究发现随着AlN晶针直径的增加A1(TO)模式的振动频率有明显的增加，而E21、A1(TO)、E22、E1(TD)和E1(LO)模式
本工作是采用光感生电流瞬态谱技术,对半绝缘砷化镓衬底上分子束外延生长的高阻碲化镉薄膜中的深能级进行了测量与分析。发现至少有5个能级,能级位置分别为0.14,0.22,0.31,0.36和0.54ev。它们可能与残余杂质,Cd空位,Cd间隙及其它结构缺陷有关。
氮化物和氧化物半导体材料及相关器件是目前国际上化合物半导体领域最活跃的研究方向。近期氮化物半导体材料的一个热点研究方向就是高In组份的GaInN材料和相关器件研究；用MBE方法生长了InN纳米材料和薄膜材料，并制备了电致发光器件，器件电致发光峰值在1.57微米左右，进一步证实了InN材料是一个窄带隙材料。近期氧化物半导体材料的一个热点和难点研究方向就是ZnO材料的p型掺杂和其紫外激光器件研究；用M
The green light emitting diode (LED) with an insertion layer between the multiple quantum wells and n-GaN layer was grown on c-plane sapphire substrate by metal organic chemical vapor deposition.We in
The stress state and its influence on structural and optical properties of GaN films grown on sapphire and 6H-SiC substrates by metalorganic chemical vapor deposition (MOCVD) were investigated.The E2
Zinc oxide (ZnO),with a direct band gap of 3.37 eV and a large exciton binding energy of 60meV,is a promising candidate for ultraviolet light-emitting devices (LEDs).Recently,ZnO based homojunction an