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Selective dry etching of GaAs over Al0.2Ga0.8As semiconductor in pulsed DC BCl3/SF6 plasma was studied for the first time.
Selective Etching of GaAs over Al0.2Ga0.8As Semiconductor in Pulsed DC BCl3/SF6 Plasma
【摘 要】
：
Selective dry etching of GaAs over Al0.2Ga0.8As semiconductor in pulsed DC BCl3/SF6 plasma was studied for the first time.
【机 构】
：
Dept.of Nano Engineering/Center for Nano Manufacturing, Inje University, Gimhae, GN, 621-749, Korea(
【出 处】
：
2011年第三届微电子及等离子体技术国际会议
【发表日期】
：
2011年期
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