【摘 要】
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The presence of dislocations in crystals may be either detrimental or beneficial to their properties.Therefore, study on dislocation generation during cryst
【出 处】
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首届内地与香港青年力学论坛2012(The 16th Annual Conference of Hong Kong So
论文部分内容阅读
The presence of dislocations in crystals may be either detrimental or beneficial to their properties.Therefore, study on dislocation generation during crystal growth has always attracted much attention.It has been observed by Mei et al.(2007) that dislocations generate during the coalescence of islands in epitaxial growth of thin films.Similarly, dislocations also generate in the crystal growth by oriented attachment, see, e.g., Lee Penn and Banfield(1998).
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