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以国产高纯石墨为基体，一甲基三氯硅烷为先驱体原料，使用化学气相沉积工艺制备了SiC涂层。利用SEM和XRD分别对筒式工装和笼式工装中不同位置所获得涂层的形貌及微观结构进行了表征，并研究了沉积速率、表面形貌、微观结构及堆积缺陷的变化规律。
基体位置对CVD SiC涂层微观结构影响规律研究
【摘 要】
：
以国产高纯石墨为基体，一甲基三氯硅烷为先驱体原料，使用化学气相沉积工艺制备了SiC涂层。利用SEM和XRD分别对筒式工装和笼式工装中不同位置所获得涂层的形貌及微观结构进
【机 构】
：
西安超码科技有限公司,西安710025
【出 处】
：
第二届中国国际复合材料科技大会 (CCCM-2)
【发表日期】
：
2015年期
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