Na2BaMQ4(M=Ge,Sn; Q=S,Se):Infrared Nonlinear Optical Materials with Excellent Performances and that

• 作 者: KuiWu;ZhihuaYang;ShiliePan;
• 机 构: Key Laboratory of Functional Materials and Devices for SpecialEnvironments of CAS
• 出 处: 第八届国际分子模拟与信息技术应用学术会议
• 发表日期: 2016年期

　　Infrared nonlinear optical(IR NLO)materials with excellent performances are particularly important in laser technology.However,to design and synthesize an efficient IR NLO material with a balance between the optical band gap and the NLO coefficient is still a huge challenge.With this in mind,four new IR NLO materials Na2BaSnS4,Na2 BaSnSe4,Na2BaGeS4,and Na2BaGeSe4 were successfully designed and synthesized.The compounds exhibit excellent properties with a suitable balance of band gap and NLO coefficient measured for Na2BaSnS4(3.27 eV and about 17 ×KDP,that is,about 17 times that of KH2PO4(KDP))and Na2BaGeS4(3.7 eV and about 10 × KDP),demonstrating that the systems satisfy the key requirements as promising IR NLO candidates.Remarkably,the new compounds also undergo a novel structural transformation from tetragonal to trigonal systems,the first time that this has been reported for quaternary metal chalcogenides.