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InAs nanowires(NWs)are competitive candidates for high performance n-type devices owing to their high electron mobility,injection velocity and cylindrical geometry.However,their applications on integrated circuits are hindered by the difficulty of switch off because of the narrow bandgap of InAs.Here,for the first time,ultrathin(diameter sub-10nm)InAs nanowires-based top-gated field-effect transistors with excellent off-state characteristics and enhancement-mode was reported.Those InAs NWs have been characterized to be single crystal wurtzite structure without stacking faults by transmission electron microscopy(TEM)[1].