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  5. Local electronic states of a single electron doped Mott insulator

Local electronic states of a single electron doped Mott insulator

来源 :中国物理学会2013年秋季学术会议 | 被引量 : 0次 | 上传用户：MyLoverQLH
【摘 要】
：
Motivated by the recent atomic-scale STM observations of a spatially localized in-gap state in the doped Mott insulators[1],we study theoretically the local electronic state in a single electron doped
【作 者】
：
Weng-Hang Leong Shun-Li Yu T.Xiang Jian-Xin Li 
【机 构】
：
Department of Physics and National Laboratory of Solid State Microstructure,Nanjing University,Nanji
【出 处】
：
中国物理学会2013年秋季学术会议
【发表日期】
：
2013年11期
【关键词】
：
doped Mott insulator in-gap local excitation 
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　　Motivated by the recent atomic-scale STM observations of a spatially localized in-gap state in the doped Mott insulators[1],we study theoretically the local electronic state in a single electron doped Hubbard model based on the cluster perturbation theory.
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