论文部分内容阅读
AlN MOCVD外延生长表面台阶聚并的控制
【机 构】
:
北京大学物理学院,北京,100871
【出 处】
:
第二十届全国半导体物理学术会议
【发表日期】
:
2015年3期
其他文献
The structural,electronic density of states,band structure and elastic properties of wurtzite Ga1-xAlxN have been investigated by using first-principles calculations based on the density functional th
会议
Electronic structure,elastic and lattices dynamic properties of PtX2(X=P,As,Sb)from first-principles
The structural,electronic density of states,band structure,elastic constants,and lattices dynamic properties of FeS2-prototype PtX2(X=P,As,Sb)have been simulated by using first-principles calculations
会议
Experimental Investigation of Partial Shading Models on Photovoltaic Cells Electrical Characteristic
会议