论文部分内容阅读
Largely enhanced lateral photovoltaic effect in μc-SiOx:H/a-Si:H/Si p-i-n structure
【机 构】
:
Heibei Key Laboratory of Optic-Electronic Information and Materials,College of Physics Science and T
【出 处】
:
第二十届全国半导体物理学术会议
【发表日期】
:
2015年3期
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The structural,electronic density of states,band structure and elastic properties of wurtzite Ga1-xAlxN have been investigated by using first-principles calculations based on the density functional th
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