21%N-TYPE FRONT JUNCTION SILICON SOLAR CELL WITH A FULL-AREA REAR MISPASSIVATED CONTACT

• 作 者: YimaoWAN;
• 机 构: Australian National University, Australia
• 出 处: SNEC 第九届(2015)国际太阳能产业及光伏工程(上海)论坛
• 发表日期: 2015年期

　　In this paper we compare n-type front-junction silicon solar cells(p+nn+) with a full-area rear, metal-insulator-semiconductor (MIS) passivated contact to a reference cell with partial rear contacts that are formed by patterning a silicon nitride layer.A conversion efficiency of 21% has been achieved for the MIS contact device with excellent VOC at 672mV and FF at 80.3%(both are comparable to the reference cell), evidencing good characteristic of a passivated contact.