【摘 要】
：
During the production of photovoltaic (PV) Si solar panels, a high level of residual stress in Si crystals often remains undetected far into the fabrication
【机 构】
：
Hinds Instruments, Inc., USA
【出 处】
：
SNEC 第九届(2015)国际太阳能产业及光伏工程(上海)论坛
论文部分内容阅读
During the production of photovoltaic (PV) Si solar panels, a high level of residual stress in Si crystals often remains undetected far into the fabrication process, until ultimately the end product (finished cell or panel) fails, or its performance is compromised.Available metrology is primarily limited to testing wafers, cells and panels, which is late in the manufacturing process.The SunShot Vision Study (2012) as sponsored by the U.S.Department of Energy identified this problem and its negative impact.1 We propose a solution to this problem by enabling stress measurement in Si ingots at an early stage in solar cell production.
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