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As a direct band gap(~1.6eV)semiconductor and a typical member of transition-metal dichalcogenides(TMDCs),few-layer WSe2 with large band gap and high mobility may be beneficial for designing logical device and photodetectors.The photoelectrical properties of WSe2 nanoflakes FETs were reported in this paper.The WSe2 nanoflakes were fabricated by mechanical exfoliation technique,and were characterized by AFM,SEM and Raman spectrum.The electrodes of the device were fabricated by standard electron-beam lithographic and metal deposition techniques,then the photo-electrical properties were measured by high-precision electronic tester and scanning photocurrent microscopy(SPCM)respectively.