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Two successful three-dimensional (3D) Fin-shaped Field Effect Transistors (FinFET) will be demonstrated. One is a 3D fin-shaped field-effect transistor structure based on III-V metal-oxide-semiconductor field-effect transistor (MOSFET) fabrication using a submicron GaAs fin as the high-mobility channel. The fin-shaped channel has a thickness-to-width ratio (TFin/WFin) equal to 1. The nano-stacked high-k Al2O3 dielectric was adopted as a gate insulator in forming a MOS structure to suppress gate leakage.