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Compound semiconductor alloys have been successfully used for a precise and simultaneous control of lattice parameter and bandgap structures bringing to existence a variety of functional heterostructures and low-dimensional systems.Extending this paradigm to group Ⅳ semiconductors will be a true breakthrough that will pave the way to creating an entirely new class of silicon-compatible electronic,optoelectronic,and photonic devices.With this perspective,germanium-tin(Ge1-xSnx)and germanium-silicon-tin(Ge1-x-ySixSny)alloys have recently been the subject of extensive investigations as new material systems to independently engineer lattice parameter and bandgap energy and directness.