Approaching the ideal elastic strain limit in silicon nanowires

来源 :The 5th Asian Conference on Mechanics of Functional Material | 被引量 : 0次 | 上传用户:yangweifeng111222
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  Achieving high elasticity for silicon (Si) nanowires,one of the most important and versatile building blocks in nanoelectronics,would enable their mechatronics application in flexible electronics and bio-nano interfaces.In this work,by using our in situ nanomechanical testing platform,we measured the elastic mechanical properties of individual silicon (Si) nanowires with diameters of~100 nm by applying uniaxial tensile straining,and demonstrated that vapor-liquid-solid(VLS)-grown single-crystalline Si nanowires can be reversibly stretched to 10% or more elastic strain,approaching the theoretical limit of silicon.The ability to achieve this "deep ultra-strength" for Si nanowires can be attributed mainly to their pristine,defect-scarce,nanosized single-crystalline structure and atomically smooth surfaces.This extraordinary elasticity in Si nanowires,and presumably in other high-quality semiconductor nanowires,will also open the doors for the emerging field of "elastic strain engineering".
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