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Mn-Co-Ni-O(MCN)spinel oxide material is a very important transition metal oxide(TMO)with the best application prospects in uncooled infrared bolometers owing to its high negative temperature coefficient of resistance(TCR)(<-3.5%/K),medium resistance and long stability.However,related studies are mainly focused on the bulk materials in the past decades [1].There are often problems of poor stability and reproducibility due to high porosity and incomplete intergranular contact in bulk material,which limits its development in the modem focal plane arrays.Recently,high quality MCN films are prepared in our group by RF sputtering and chemical solution deposition(CSD).The microstructural characterizations reveal the films present excellent crystallization and compact surface.The variable temperature electrical results show the films have TCR of-3.8%/K at 295 K.The electronic structure of the films confirms that it is indeed of n-type nature,exhibiting appropriate electronic states consistent with the levels of metal electrodes and semiconductors.Excellent performance of RF-MCN films is demonstrated,combining for the first time preferred orientation,high TCR,and moderate resistivity.The RF-MCN films show an intrinsic recombination with a much faster rate of the order of a microsecond for the laser-pumped carriers,which is~3 orders of magnitude larger compared with that of the ceramic material [2].MCN film detectors are also fabricated by photolithography follow by wet etching process to evaluate the applications for infrared detection.It exhibits a noise equivalent temperature difference as low as 2.1 × 10-7 K/Hz1/2,responsivity of 330 V/W,and detectivity of 0.6× 108 cmHz1/2/W at 30 Hz [3].The results offer a vital avenue for depositing high performance TMO thin films for advanced oxide devices,and will have great significance for exploiting new applications in modem oxide electronics and optoelectronics.