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Resistive switching behaviour has been intensively studied in oxides[1,2].In oxides,it is well known that oxygen vacancies play an important role in the resistive switching behaviour[3].The oxygen vacancies can be created in single crystal by annealing processes,such as annealing in vacuum or in inert gas atmosphere.So the annealing process is significant for the investigation of resistive switching.In present work,the single crystal SrTiO3(STO)was annealed by laser.Compared to vacuum annealing or annealing in inert gas atmosphere,using laser annealing,the sample can be locally heated to a high enough temperature while other part of the sample still maintain a low temperature.So laser annealing can be compatible with other processes and avoid the damage of other part of the sample caused by the heat.In addition,it can be controlled to only have effects on the specific area in the sample.The single crystal STO was annealed by laser with the laser energy of 0.6 J/cm2.After the laser annealing,Ti/Pt was sputtered on the surface of the single crystal and the electrodes were formed by lithography.The planar structure of Pt/Ti/STO/Ti/Pt was formed.The area of the single electrode was 0.01 mm2.The distance between the adjacent electrodes was 5 lμin.The resistive switching behaviour was observed between the adjacent planar electrodes at the voltage of 7 V.This can be ascribe to the generation of oxygen vacancies by laser annealing.This work proved that the resistive switching behaviour can be achieved in single crystal STO by using laser annealing to creat oxygen vacancies,which provides a new path to make the single crystal or single crystalline thin film show the resistive switching behaviour.And this work is also beneficial for the understanding of the mechanism of resistive switching and its application.