Nanofabrication of Inter-digitized Graphene Devices by Resist-free Stencil Lithography

来源 :The 6th International Conference on Nanoscience and Technolo | 被引量 : 0次 | 上传用户：jackfbi

【摘要】

：

　　Stencil lithography(SL)is a high resolution shadow mask technique that allows the patterning of structures and devices such as metallic nano-dots,nanowires

【作者】

：

JunjieLi;YifangChen;

【机构】

：

Nanolithography and Application Research Group,State Key Lab of Asic and System,Fudan University,Sha

【出处】

：

The 6th International Conference on Nanoscience and Technolo

【发表日期】

：

2015年期

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　　Stencil lithography(SL)is a high resolution shadow mask technique that allows the patterning of structures and devices such as metallic nano-dots,nanowires and NEMS [1].Compared to other techniques such as EBL,NIL and DUV/EUV lithography,SL has important advantages of not requiring any resists or light/e-beam exposure to avoid potential damage on the lattice structures of graphene.Based on this motivation,this work attempts to apply SL for the fabrication of interdigitated electrodes as a comb shape on graphene.The overall comb size is 60 μm.

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Nanofabrication of Inter-digitized Graphene Devices by Resist-free Stencil Lithography

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