Gate-all-around Field-Effect Transistors with InSb Nanowires

来源 :The 6th International Conference on Nanoscience and Technolo | 被引量 : 0次 | 上传用户：Glorygwj

【摘要】

：

　　The narrow bandgap of InSb(180 meV)gives rise to considerable large leakage currents in the off-state regime of field-effect transistors(FETs)at room temper

【作者】

：

WeiPan[1]ShaoyunHuang[1]CaroffPhilippe[2]CanLi[1]HongqiXu[1]

【机构】

：

Key Laboratory for the Physics and Chemistry of nanodevices and Department of Electronics,Peking Uni

【出处】

：

The 6th International Conference on Nanoscience and Technolo

【发表日期】

：

2015年期

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论文部分内容阅读

　　The narrow bandgap of InSb(180 meV)gives rise to considerable large leakage currents in the off-state regime of field-effect transistors(FETs)at room temperature,hence compromises practical implementations.In this work,we utilize an encapsulated gate-all-round(GAA)structure rather than planar gate structures to improve the gate-to-channel coupling.Furthermore,we employ InSb nanowires with small diameters to take the advantages of quantum confinement effects,which extend the bandgap of the nanowires.

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Gate-all-around Field-Effect Transistors with InSb Nanowires

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