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In recent years, due to the intriguing electrical and optical characteristics, two dimensional layered materials such as graphene, MoS2 have attracted tremendous research attention. However, until now, majority of the efforts have been focused on the integration of these materials in the back- or dual-gated geometry due to the difficulty of compact and conformal top-gated dielectric deposition directly onto the 2-D channel for the realization of high-performance top-gated FETs.