Properties of MoO3 buffer layer in copper phthalocyanine film transistors

• 作 者: JianlinZhou;ChubingGuo;
• 机 构: Department of Electronic Engineering, College of Communication and Electronics, Chongqing University
• 出 处: 第十三届全国固体薄膜学术会议
• 发表日期: 2012年期

　　Molybdenum oxide (MoO3) is introduced under aluminium (Al) source-drain (S-D) electrodes to compose bilayer electrodes in organic thin film transistors (OTFTs) based on copper phthalocyanine (CuPc).By using MoO3/Al electrodes,the devices can overcome the large contact barrier exists between Al and organic semiconductors,and then the performance can be improved obviously.The hole mobility of device with bilayer MoO3/Al electrodes is even higher about 30 times than the mobility of devices with single Al electrodes.Moreover,the threshold voltage is largely decreased when the MoO3 inserting between Al and CuPc.Then the performance of device with bilayer MoO3/Al electrodes nearly can reach the level of device with Au electrodes.The properties of MoO3 film upon CuPc are also investigated by XRD and AFM technology carefully.