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  5. Radiation damage of SiGe HBT induced by 25MeV carbon ions

Radiation damage of SiGe HBT induced by 25MeV carbon ions

来源 :第13届中日双边先进能源系统和聚变裂变工程材料会议(CIS-13) | 被引量 : 0次 | 上传用户：klzvms1
【摘 要】
：
The typical DC electrical parameters of SiGe HBT samples before and after 25MeV carbon ions irradiation are measured and compared in the present work.The ionization damage coupled with displacement da
【作 者】
：
Shuhuan Liu Cen Xiong Zhuoqi Li Yuan yuan Haowei Li 
【机 构】
：
School of Nuclear Science and Technology,Xi'an Jiaotong University,Xi'an,Shaanxi,710049,China
【出 处】
：
第13届中日双边先进能源系统和聚变裂变工程材料会议(CIS-13)
【发表日期】
：
2016年3期
【关键词】
：
SiGe HBT Radiation effects Carbon ion Ionization damage Displacement damage 
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　　The typical DC electrical parameters of SiGe HBT samples before and after 25MeV carbon ions irradiation are measured and compared in the present work.The ionization damage coupled with displacement damage induced by carbon ions in SiGe HBT are simulated.The performance degradation mechanisms of the test SiGe HBT samples caused by carbon ions irradiation are analyzed.
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