【摘 要】
：
As a typical wide band gap semiconductor,ZnO is environmentally friendly and inexpensive,and has strong photogenerated hole oxidation ability.In addition,th
【机 构】
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School of Materials Science and Engineering,University of Science and Technology Beijing,Beijing 100
【出 处】
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The 6th International Conference on Nanoscience and Technolo
论文部分内容阅读
As a typical wide band gap semiconductor,ZnO is environmentally friendly and inexpensive,and has strong photogenerated hole oxidation ability.In addition,the electron mobility of ZnO is 10 to 100 times higher than that of TiO2,resulting in improved electron transfer efficiency [1].However,the ZnO photoanode has low absorptance in visible region,due to the wide band gap(3.37 eV),which hinders its applications.To solve this problem,considerable efforts have been made,such as doping,sensitizing with quantum dots or dye,and construction of heterojunctions with other semiconductors.
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