【摘 要】
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Defects are known to produce negative and positive effects in silicon solar cells.Reducing the former and enhancing the latter is the goal of advanced cell fabrication.In this work we address a critic
【出 处】
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SNEC 第八届(2014)国际太阳能产业及光伏工程(上海)论坛
论文部分内容阅读
Defects are known to produce negative and positive effects in silicon solar cells.Reducing the former and enhancing the latter is the goal of advanced cell fabrication.In this work we address a critical element of such a task, namely, fast and effective root cause defect analysis.The approach takes advantage of a recently introduced,multiparameter correlation metrology with mapping of multiple properties on one wafer,rather than preparation and testing of a large body of separate samples.Sequential whole wafer mapping is performed with noncontact techniques available in the Semilab PV-2000A tool.The measurement cycle includes two stages: 1-the inspection stage where different maps are compared with respect to pattern and histograms and 2-the quantitative correlation stage involving site-to-site map comparison.
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