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Band structure of InGaAs(Bi) quantum well investigated by magneto-optical spectroscopy and eight-ban
【机 构】
:
National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics,Chinese Academy of
【出 处】
:
第七届铋化物半导体国际研讨会(7th International Workshop on Bismuth-contain
【发表日期】
:
2016年11期
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