Metal-insulator transition induced by oxygen vacancies in ionic liquid gated manganite films

• 作 者: 葛琛[1]金奎娟[1]谷林[1]彭丽聪[1]胡勇胜[1]李建坤[1]郭海中[1]王嘉鸥[2]郭向欣[3]王灿[1]何萌[1]吕惠宾[1]杨国桢[1]
• 机 构: 中国科学院物理研究所,北京100190
• 出 处: 中国物理学会2015年秋季会议
• 发表日期: 2015年期

　　Electrolyte gating with ionic liquid has attracted significant attention as a powerful tool for greatly modulating the physical properties in a variety of materials.However,for electrolyte gating in transitional metal oxides,there has been controversy on the origin of electronic phase transition.(See Ref.[1-3] and many other papers published in the past three years)Herein,we report the control and the mechanism of metal-insulator transition via ionic liquid gating in hole doped manganite films.