Development Of High Density Nano-Protrusions Onto CuInS,Cu(In,Ga)S,CuInSe,And Cu(In,Ga)Se With Disti

来源 :2015台湾物理年会 | 被引量 : 0次 | 上传用户：kaeco

【摘要】

：

　　Copper indium(gallium)diselenide(CI(G)Se)and its related sulfide(copper indium(gallium)disulfides,CI(G)S)are promising chalcopyrite thin film solar cell abs

【作者】

：

Yu-Ting Yen Yi-Chung Wang Yu-Ze Chen Hung-Wei Tsai Cheng-Hung Hsu Shih-Ming Lin Chih-Chung Lai Yu-Lun Chueh

【机构】

：

DepartmentofMaterialsScienceandEngineering,NationalTsingHuaUniversity,HsinchuCity,Taiwan

【出处】

：

2015台湾物理年会

【发表日期】

：

2015年1期

【关键词】

：

Nanostructure Antireflection Cu(In Ga)(S Se)2

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　　Copper indium(gallium)diselenide(CI(G)Se)and its related sulfide(copper indium(gallium)disulfides,CI(G)S)are promising chalcopyrite thin film solar cell absorber materials due to versatile bandgap tailoring properties.

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Development Of High Density Nano-Protrusions Onto CuInS,Cu(In,Ga)S,CuInSe,And Cu(In,Ga)Se With Disti

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