High-Quality Graphene P-N-P Junctions Through Controlled Metallic Diffusion

来源 :2015台湾物理年会 | 被引量 : 0次 | 上传用户：zhoujhipanel

【摘要】

：

　　We report high-quality graphene p-n-p junctions achieved by controlled metallic diffusion.Generally,metal deposition on graphene surface introduces substant

【作者】

：

Cheng-Hua Liu Min-Ken Li Shih-Ching Liou Fu-Yu Shih Po-Hsun Ho Chun-Wei Chen Chi-Te Liang Wei-Hua Wang

【机构】

：

Departmentofphysics,NationalTaiwanUniversity,Taipei,Taiwan;InstituteofAtomicandMolecularSciences,Aca

【出处】

：

2015台湾物理年会

【发表日期】

：

2015年1期

【关键词】

：

graphene p-n-p junctions quantum hall effect

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　　We report high-quality graphene p-n-p junctions achieved by controlled metallic diffusion.Generally,metal deposition on graphene surface introduces substantial carrier scattering,which undermines the high mobility of intrinsic graphene.

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High-Quality Graphene P-N-P Junctions Through Controlled Metallic Diffusion

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