Tuning of Metal-Insulator Transition in Oxide Thin Films By Doping

• 作 者: JunwooSon;KangMinkook;YoonHyojin;
• 机 构: Department of Materials Science and Engineering,POSTECH,Pohang,South Korea
• 出 处: The 5th International Congress on Ceramics, ICC5(第五届国际陶瓷大会)
• 发表日期: 2014年期

　　The oxide thin films with d band electrons have attracted significant attention due to the interesting phenomena,such as Mott metal-insulator transitions,arising from strong interactions in d-bands.Moreover,the transitions observed in these materials exhibit sensitive and abrupt change in their electrical properties depending on the means of control,such as strain and doping.In this talk,the doping control of the metalinsulator transition will be discussed in the oxide thin films: NdNiO3 and NbO2.