Synthesis and field emission properties of vertically aligned graphene layers grown in CH4+H2 plasma

来源 :International Conference on Nanoscience & Technology,China 2 | 被引量 : 0次 | 上传用户：gongwen_2003

【摘要】

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【作者】

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Yanqing Guo Rui Huang Jie Song Chao Song Xiang Wang Zewen Lin

【机构】

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Department of Physics and Electrical Engineering,Hanshan Normal University,Chaozhou 521041,China

【出处】

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International Conference on Nanoscience & Technology,China 2

【发表日期】

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2013年3期

【关键词】

：

graphene VHF-PECVD low temperature

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　　Vertically aligned graphene has good physical and chemical properties and is considered as a kind of field emission material.In the present work, vertically aligned graphene layers (nanowalls) have been synthesized by using very high frequency plasma-enhanced chemical vapour deposition at low temperatures.Scanning electron microscopy, high-resolution transmission electron microscopy, and Raman scattering measurements are used to characterize the nanowall nanostructure.The growth mechanism ofnanowall nanostructure was discussed.The field emission characteristics for different nanowall structures were also investigated.

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Synthesis and field emission properties of vertically aligned graphene layers grown in CH4+H2 plasma

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