【摘 要】
：
The development of even more powerful computer systems are made possible by scaling of CMOStransistors, and this simple process has afforded continuous impr
【机 构】
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Department of Electronics, Peking University, Beijing 100871, China
【出 处】
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The 6th International Conference on Nanoscience and Technolo
论文部分内容阅读
The development of even more powerful computer systems are made possible by scaling of CMOStransistors, and this simple process has afforded continuous improvement in both the device switch time andintegration density. However, CMOS scaling has become very difficult at the 14-nm node and unlikely to be rewardingbeyond the 10-nm node. Among other new approaches, carbon nanotube devices are emerging as the mostpromising technique with unique properties that are ideal for nanoelectronics. In particular, perfect n-type and p-typecontacts are now available for controlled injection of electrons into the conduction band and holes into the valenceband of the CNT, paving the way for a doping free fabrication of CNT based ballistic CMOS, high performanceoptoelectronic devices, and integrated circuits [1-3].
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