Selective Growth of Semiconducting Single-walled Carbon Nanotubes

来源 :The 6th International Conference on Nanoscience and Technolo | 被引量 : 0次 | 上传用户:ghosty
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  Even though the devices made from individual nanotubes have shown outstanding performances such as high mobility, high current, high thermal conductivity, good chemical and mechanical stability, the high hope for the next generation of carbon nanotube based electronics is hampered by several major problems. Among them, is the lack of reliable methods to control the alignment and position of nanotubes as well as, and perhaps most problematically, the growth of nanotubes with controlled chiralities. Even though the post-growth separation of metallic from semiconducting SWNTs have made very good progress, the alignment and assembly of the separated nanotubes into devices are still challenging and not suitable for large scale fabrication.
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