Total dose radiation induced changes of the floating body effects in the partially depleted SOI nMOS

来源 :2016年上海市研究生学术论坛——电子科学与技术 | 被引量 : 0次 | 上传用户：boycant

【摘要】

：

　　In this paper, the impacts of ionizing radiation on the gate induced floating body effects (GIFEBs) and low-frequency (LF) noise for the 130nm partially dep

【作者】

：

LihuaDai;ChaoPeng;ZhiyuanHu;ZhengxuanZhang;

【机构】

：

Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, C

【出处】

：

2016年上海市研究生学术论坛——电子科学与技术

【发表日期】

：

2016年期

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　　In this paper, the impacts of ionizing radiation on the gate induced floating body effects (GIFEBs) and low-frequency (LF) noise for the 130nm partially depleted silicon-on-insulator (PDSOI) N-type metal-oxide semiconductors (NMOS) transistor with an ultrathin gate oxide have been investigated.It is shown that the second transconductance gm peak becomes smaller after irradiation when the Lorentzian-like excess noise is more pronounced.A new interpretation is proposed to explain the changes in the GIBFEs and excess noise.

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Total dose radiation induced changes of the floating body effects in the partially depleted SOI nMOS

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