【摘 要】
：
In recent years, HfO2 has attracted considerable attentions for its application in resistance random access memory (RRAM) devices which have potential advantages such as simple structure, high integra
【机 构】
：
Advanced Electronic Materials Institute,General Research Institute for Nonferrous Metals,Beijing 100
【出 处】
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International Conference on Nanoscience & Technology,China 2
论文部分内容阅读
In recent years, HfO2 has attracted considerable attentions for its application in resistance random access memory (RRAM) devices which have potential advantages such as simple structure, high integration density, and nondestructive readout.However, several issues still exist for the HfO2 based RRAM devices, including high operation voltage, low resistance ratio, and the necessity of a high-voltage electro-forming process, which are still need to be investigated in order to render the HfO2-based RRAM performance competitive for practical nonvolatile memory applications.
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