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The switching behaviors of ionic/electronic mixed conductor-based solid electrolyte nonvolatile memories have been attributed to repetitive formation and breakage of the conductive pathways inside a solid electrolyte.However, direct evidences of such pathway existences and their formations have never been provided.Herein, we reproduced the switching behavior of silver ion based resistance switching memory device inside a high-resolution transmission electron microscopet.The in-situ formation and breakage of a nanoscale conductive channel were ultimately verified in real time and under atomic resolution.Two typical structures were studied.