论文部分内容阅读
GaN is one of the main materials for the blue green light-emitting optoelectronic and other electronic devices.GaN-based Light Emitting Diodes (LEDs) are now commercially available and marvelous progress has been made in recent years.Metalorganic Chemical Vapor Deposition (MOCVD) technology has been widely employed in research and industry production for these GaN-based optoelectronic and electronic materials and devices currently.However,many technological and scientific barriers still exist in this materials system.The most dominant ones are stoichiometric nitrogen incorporation,p-type doping,and the availability of lattice-and thermally-matched substrates.