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  5. THz Modulation Performance of VO2 Film Grown on Al2O3/Si Substrate

THz Modulation Performance of VO2 Film Grown on Al2O3/Si Substrate

来源 :The 7th UK/Europe-China Workshop on Millimeter Waves and Ter | 被引量 : 0次 | 上传用户：s1u2n3cn
【摘 要】
：
High quality VO2 thin film was successfully deposited on Si substrate with Al2O3 as a buffer layer.The electrical and optical performance of the film was great enhanced.Reflective terahertz modulation
【作 者】
：
Ying Xiong Qi-Ye Wen Zhi Chen Qing-Hui Yang Huai-wu Zhang 
【机 构】
：
State Key Laboratory of Electronic Films and Integrated Devices,University of Electronic Science and
【出 处】
：
The 7th UK/Europe-China Workshop on Millimeter Waves and Ter
【发表日期】
：
2014年4期
【关键词】
：
VO2 thin film Terahertz modulation 
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　　High quality VO2 thin film was successfully deposited on Si substrate with Al2O3 as a buffer layer.The electrical and optical performance of the film was great enhanced.Reflective terahertz modulation is characterized and a modulation amplitude of 55%is obtained.The VO2-on-Si buffered by Al2O3 can be widely used for THz devices.
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