Interface Engineered Ferroelectric Heterostructures

来源 :The 5th International Congress on Ceramics, ICC5(第五届国际陶瓷大会) | 被引量 : 0次 | 上传用户：jiangjia09

【摘要】

：

　　Interface engineered ferroelectric heterostructures were epitaxially grown on crystal substrate surfaces,such as single(001)MgO,(001)LaAlO3,polycrystalline

【作者】

：

MingLiu;C.L.Chen;

【机构】

：

Department of Physics and Astronomy,University of Texas at San Antonio,San Antonio,TX 78249,USA

【出处】

：

The 5th International Congress on Ceramics, ICC5(第五届国际陶瓷大会)

【发表日期】

：

2014年期

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　　Interface engineered ferroelectric heterostructures were epitaxially grown on crystal substrate surfaces,such as single(001)MgO,(001)LaAlO3,polycrystalline metal types,and semiconductors surfaces by pulsed laser deposition.Microstructural characterizations by X-ray diffraction and transmission electron microscopy indicate that the as-grown heterostructures are c-axis oriented with an atomic sharp interface.

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