Crystal Structure-Dependent Electromechanical Properties of InAs Nanowires

来源 :The 6th International Conference on Nanoscience and Technolo | 被引量 : 0次 | 上传用户：zydolphin

【摘要】

：

　　As an important Ⅲ–Ⅴ group semiconducting nanomaterial,InAs nanowires(NWs)have been reported to show great potential in ultrahigh frequency electronic nan

【作者】

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XingLi[1]XianlongWei[1]TingtingXu[1]DongPan[2]JianhuaZhao[2]QingChen[1]

【机构】

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Key Laboratory for the Physics and Chemistry of Nanodevices,Department of Electronics,Peking Univers

【出处】

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The 6th International Conference on Nanoscience and Technolo

【发表日期】

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2015年期

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　　As an important Ⅲ–Ⅴ group semiconducting nanomaterial,InAs nanowires(NWs)have been reported to show great potential in ultrahigh frequency electronic nanodevices and high-performance near-infrared optoelectronic nanodevices due to their high electron mobility and narrow direct bandgap.Recently,single-crystalline InAs NWs in pure wurtzite(WZ)structure have been successfully synthesized [1].The non-centrosymmetry of WZ structure and the narrow direct bandgap provide a possibility that InAs NW might be a promising material exhibiting the piezotronic effect in high frequency electronics and the piezo-phototronic effect in near infrared wavelength.

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Crystal Structure-Dependent Electromechanical Properties of InAs Nanowires

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