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基于单电子隧道效应的半经典模型，研究了电容耦合三结高温超导单电子晶体管的基本方程，分析了其I－V特性，并对两结和三结高温超导单电子晶体管的特性进行了比较。结果表明，单电子晶体管的特性与常规晶体管有很大的差别，且三结高温超导单电子晶体管比两结高温超导单电子晶体管有更高的灵敏度和更强的抗电磁干扰能力。
Based on the semi-classical model of single-electron tunneling, the basic equations of the capacitively coupled triple junction high temperature superconductor single electron transistor are studied, the I-V characteristics are analyzed, and the characteristics of two junction and triple junction high temperature superconductor single electron transistors A The results show that the characteristics of single electron transistors are quite different from those of conventional transistors, and the triple junction high temperature superconductor single electron transistor has higher sensitivity and stronger anti-electromagnetic interference capability than the two-junction high temperature superconductor single electron transistor.