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三菱电机公司研制出了新的硅成膜技术——高压氧化法。有关这种新技术在MOSLSI中的应用结果,在八月份举行的电子通信学会电子元件与材料研究会上发表了。 这种新的高压氧化法与以往的常规氧化法相比,氧化时间缩短了。由于热处理温度变低,从而使器件特性得以提高。由于有这些优点,使高压氧化法正成为半导体工业中有力的工艺方法。 在用于MOS LSI以前。首先把普通硅膜与由高压氧化法形成的膜进行了比较,非
Mitsubishi Electric Corporation developed a new silicon film-forming technology - high-pressure oxidation. The application of this new technology in MOSLSI was presented at the Institute of Electronics and Materials Electronics and Materials Research in August. The new high-pressure oxidation method compared with the conventional oxidation method, the oxidation time is shortened. As the heat treatment temperature becomes lower, so that the device characteristics can be improved. Due to these advantages, high-pressure oxidation is becoming a powerful process in the semiconductor industry. Before used in MOS LSI. First, the ordinary silicon film and the film formed by the high-pressure oxidation were compared, non