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利用化学机械抛光方法对锇基片进行表面平坦化处理,通过自制抛光液研究不同表面活性剂对锇化学机械抛光效果的影响。采用电化学分析方法和X射线光电子能谱(XPS)仪分析表面活性剂对锇抛光的影响,利用原子力显微镜(AFM)观察抛光后锇的表面形貌。结果表明:加入四甲基氢氧化铵(TMAOH)后,金属锇的去除速率从5.8 nm/min降低到2.9 nm/min,同时锇表面粗糙度从2.1 nm上升到4.8 nm;聚乙二醇400(PEG-400)、六偏磷酸钠(SHMP)、十二烷基磺酸钠(SDS)3种表面活性剂虽然可以提高金属锇的抛光速率,但是在改善锇表面质量方面并没有帮助;十二烷基硫酸钠(SLS)和十六烷基三甲基溴化铵(CTAB)不仅可以提高金属锇的抛光速率,而且可以得到更好的表面平坦化效果,其中十六烷基三甲基溴化铵效果更加明显,可以将锇表面粗糙度(Ra)降低到0.57 nm,同时将抛光速率提高到14.6 nm/min。
The chemical mechanical polishing method was used to planarize the surface of osmium substrate. The effects of different surfactants on the osmotic mechanical polishing of osmium were studied by using self-made slurry. The effects of surfactants on osmium polishing were analyzed by electrochemical analysis and X-ray photoelectron spectroscopy (XPS). The surface morphology of osmium after polishing was observed by atomic force microscopy (AFM). The results showed that the removal rate of osmium decreased from 5.8 nm / min to 2.9 nm / min with the addition of tetramethylammonium hydroxide (TMAOH), and the osmium surface roughness increased from 2.1 nm to 4.8 nm. Polyethylene glycol 400 (PEG-400), sodium hexametaphosphate (SHMP) and sodium dodecyl sulfate (SDS) did not help to improve the surface quality of osmium though it could improve the polishing rate of osmium. Sodium dialkyl sulphate (SLS) and cetyltrimethylammonium bromide (CTAB) not only increase the polishing rate of osmium metal but also provide better surface planarization, with cetyltrimethyl The effect of ammonium bromide is even more pronounced, reducing osmium surface roughness (Ra) to 0.57 nm and increasing the polishing rate to 14.6 nm / min.