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V578微波晶体管是一种发展了的微波波段低噪声放大器件。使用它可以在6千兆赫下起到放大和振荡作用。它的特性是:载止频率在7千兆赫左右,功率增盆在4千兆赫下是7分贝,噪声系数是5分贝,它的发射极宽度是2微米。由于采用浅扩散方式制作0.2微米的收集极结和0.1微米的基区,因而获得了高的载止频率。采用铂和金的多层结构的电极特别适用于高可靠性方面的应用。杂散电感、电容对于管壳封装的影响很小,因此呈现出良好的高频特性。管壳的形状是带线型的。在环境温度25℃的情况下,绝对极限值是:收集极-基极电压15伏,收集极-发射极电压8伏,发射极-基极电压3伏,收集极电流20毫安,收集极耗散功率150毫瓦,工作结温150℃,存贮温度-65℃～150℃。
V578 microwave transistor is a development of the microwave band low-noise amplifier. Use it to amplify and oscillate at 6 GHz. Its features are: a carrier frequency of about 7 GHz, a power increase of 7 dB at 4 GHz, a noise figure of 5 dB, and an emitter width of 2 μm. Due to the shallow diffusion mode to make 0.2 micron collector junctions and 0.1 micron base area, thus obtaining a high stop frequency. Multi-layered electrodes using platinum and gold are particularly suitable for high reliability applications. Stray inductance, the capacitance of the package for the package has little effect, so showing good high-frequency characteristics. The shape of the envelope is linear. At 25 ° C ambient temperature, the absolute limits are: collector-base voltage of 15V, collector-emitter voltage of 8V, emitter-base voltage of 3V, collector current of 20mA, collector Dissipated power 150 milliwatts, working junction temperature 150 ℃, storage temperature -65 ℃ ~ 150 ℃.