【摘 要】
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This paper investigates the influence of the short-channel effects(SCEs)on the static noise margin(SNM)of 6T(6 transistors)SRAM composed of 2D MOSFETs.An analytical a
【出 处】
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Science China(Information Sciences)
【基金项目】
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supported by Applied Basic Research Programs of Science and Technology Department of Sichuan Province,China(Grant No.M110103012016JY0044)