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测量了缝电极和梳形电极a-Si:H样品的光伏安特性和光电灵敏度,提出了由光电灵敏度计算电荷放大增益的方法。由此法测出的a-Si:H的电荷放大增益,在10~5V/cm电场下,高达4.3×10~3。本文从能态图讨论了a-Si:H中电荷放大效应的产生过程。由测量的增益值计算了电子迁移率与寿命之积。
The photovoltaic characteristics and photoelectric sensitivities of a-Si: H samples were measured, and the method of calculating the charge amplification gain by photoelectric sensitivity was proposed. The charge amplification gain of a-Si: H measured by this method is as high as 4.3 × 10 -3 under the electric field of 10-5 V / cm. This paper discusses the generation of charge amplification in a-Si: H from the energy state diagram. The product of electron mobility and lifetime is calculated from the measured gain value.