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本文介绍了用739厂的P型硅单晶制作Si(Li)X射线探测器所得的一些结果。探测器对~(55)Fe5.89keVX射线的能量分辨率小于165eV(FWHM)。并介绍了用国内不同厂家的几种P型硅单晶在美国劳伦斯实验室(LBL)制作Si(Li)X射线探测器的结果。实验表明,国产P型硅单晶可以制出高质量Si(Lj)X射线探测器。对西德瓦克(Wacker)公司的一些P型硅单晶和国产一些较高电阻率材料进行了对比试验,利用LBL的条件分析了某些材料的深能级杂质,并对实验中的一些问题进行了简单的讨论。
This article describes some of the results obtained with the Si (Li) X-ray detector fabricated from the P-type silicon single crystal of the 739 plant. The energy resolution of ~ (55) Fe5.89 keV X-ray is less than 165 eV (FWHM). The results of making Si (Li) X - ray detector by LBL from several domestic P - type single crystals from different manufacturers are introduced. Experiments show that domestic P-type silicon single crystal can produce high quality Si (Lj) X-ray detector. Some P-type silicon single crystals of Wacker Company and some high resistivity materials made in China were comparatively tested. The deep level impurities of some materials were analyzed by the condition of LBL. Some of the experiments The problem was briefly discussed.