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MOSFET器件继续微缩则闸极氧化层厚度将持续减小,在0.13μm的技术闸极二氧化硅的厚度必须小于2nm,然而如此薄的氧化层直接穿透电流造成了明显的漏电流。为了降低漏电流,二氧化硅导入高浓度的氮如脱耦等离子体氮化制备氮氧化硅受到高度重视。然而,脱耦等离子体氮化制备氮氧化硅的一项顾虑是pMOSFET负偏压温度的失稳性。在此研究里测量了脱耦等离子体氮化制备氮氧化硅pMOSFET负偏压温度失稳性,并且和传统的二氧化硅闸电极比较,厚度1.5nm的脱耦等离子体氮化制备氮氧化硅pMOSFET和厚度1.3nm的二氧化硅pMOSFET经过125℃和10.7MVcm的电场1h的应力下比较阈值电压,结果显示脱耦等离子体氮化制备氮氧化硅pMOSFET在负偏压温度应力下性能较差。在15%阈值电压改变的标准下,延长10年的寿命,其最大工作电压是1.16V,可以符合90nm工艺1V特操作电压的安全范围内。
With the continued miniaturization of the MOSFET device, the thickness of the gate oxide will continue to decrease, and the thickness of the gate oxide at 0.13 μm must be less than 2 nm. However, such a thin oxide directly penetrates the current to cause significant leakage current. In order to reduce the leakage current, the introduction of silicon dioxide into a high concentration of nitrogen, such as the preparation of nitric oxide by nitrating the plasma, is highly valued. However, one concern with nitrided silicon nitride for the nitridation of a decoupled plasma is the destabilization of the pMOSFET negative bias temperature. In this study, the negative bias temperature instability of silicon oxynitride pMOSFET fabricated by nitridation of nitrided silicon nitride was measured and compared with the conventional silicon dioxide gate electrode, nitrided silicon nitride with a thickness of 1.5 nm was nitrided The pMOSFET and the 1.3-nm-thick silicon dioxide pMOSFET were compared under a stress of 125 ° C. and an electric field of 10.7 MVC for 1 hour, and the results showed that the nitriding silicon oxynitride-pMOSFET prepared by the nitriding of the decoupled plasma had poor performance under the negative bias temperature stress. With a 15% threshold voltage change, the 10-year lifespan is extended to a maximum operating voltage of 1.16V, which is within the safe range of 1V operating voltage for a 90nm process.